| PART |
Description |
Maker |
| SC0365.SERIES 2598 |
SCHOTTKY DIE 036 x 036 mils
From old datasheet system
|
International Rectifier
|
| HUF75321D3ST |
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor
|
| 2SJ555 2SJ555-E |
60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| 2SJ555 |
0.036 ohm, POWER, FET
Silicon P-Channel MOS FET
|
Hitachi Semiconductor
|
| PE1002-2 |
Field Replacable Tab Contact 0.036 Contact Diameter And .005 x .020 Tab
|
Pasternack Enterprises, Inc.
|
| IRHG58110 IRHG53110 IRHG54110 IRHG57110 |
100V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
100V 300kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
|
IRF[International Rectifier]
|
| 555-0402 555-0402-5N6-G-00 555-0402-3N3-G-36 555-0 |
1 ELEMENT, 0.011 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.015 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0075 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0051 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.036 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0039 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Chip inductors, wire wound, surface mount, 0402 package
|
WEARNES CAMBION LTD
CAMBION Electronic Components
|
| 0402WL3R9JT 0402WL360KT 0402WL3R6JT 0402WL3R6KT 04 |
1 ELEMENT, 0.0039 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.036 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0036 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.0051 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
AMERICAN TECHNICAL CERAMICS CORP
|
| LTO030F0.01OHMJTE3 LTO030F0.02OHMJTE3 LTO030F0.03O |
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.01 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.02 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.03 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.022 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.033 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.039 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.012 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.043 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.056 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.018 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.027 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.062 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.024 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.051 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.036 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.013 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.047 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.011 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.016 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
|
Vishay Intertechnology, Inc.
|
| 0603CT-18NXJLU 0603CT-18NXJLW 0603CT-18NXGLU 0603C |
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.018 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.051 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0023 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.051 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.0047 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0047 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.024 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.024 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.043 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.036 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.039 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 5% tol, SMT, RoHS 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.0039 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
RF inductor, ceramic core, 2% tol, SMT, RoHS 1 ELEMENT, 0.033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Coilcraft, Inc.
Hynix Semiconductor, Inc.
COILCRAFT INC
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
|
